c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf f f f f 1 1 1 1 2 2 2 2 n6 n6 n6 n6 5 5 5 5 rev.a oct .2010 silicon n-channel mosfet features 12a,650v,r ds (on)(max0. 7 8 )@v gs =10v ultra-low gate charge(typical 51.7 nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general description thi s pow e r mo sf et is pr od u ced usi ng wi n sem i s adv an ce d planar stripe, vdmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for ac-dcswitching power supplies, dc-dcpower converters, high voltage h-bridge motor drive p wm absolute maximum ratings symbol parameter value units v dss drain source voltage 650 v i d continuous drain current(@tc=25 ) 12 a continuous drain current(@tc=100 ) a i dm drain current pulsed (note1) a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 990 mj e ar repetitive avalanche energy (note 1) 22 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation(@tc=2 5 ) 51 w derating factor above 25 0.41 w/ t j, t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 2.45 /w r qcs thermal resistance, case-to-sink - - - /w r qja thermal resistance, junction-to-ambient - - 62.5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 1 1 1 1 2 2 2 2 n6 n6 n6 n6 5 5 5 5 2 / 7 electrical characteristics (tc = 25 c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate ? source breakdown voltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cut ? off current i dss v ds = 650 v, v gs = 0 v - - 10 a v ds = 480 v, tc = 12 5 - - 100 a drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 650 - - v gate threshold voltage v gs(th) v ds = 10 v, i d =250 a 3 - 4 .5 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 6a - 0.64 0. 7 8 forward transconductance gfs v ds = 50 v, i d = 6a - 6.4 - s input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz - 1830 - pf reverse transfer capacitance c rss - 2.2 - output capacitance c oss - 155 - switching time rise time tr v dd =325 v, i d =12a r g =25 (note4,5) - 50 - ns turn ? on time ton - 49 - fall time tf - 310 - turn ? off time toff - 54 - total gate charge (gate ? source plus gate ? drain) qg v dd = 520 v, v gs = 10 v, i d = 12 a (note4,5) - 51.7 - nc gate ? source charge qgs - 9.6 - gate ? drain ( miller ) charge qgd - 18.6 - source ? drain ratings and characteristics (ta = 25 c) characteristics symbol test condition min type max un it continuous drain reverse current i dr - - - 12 a pulse drain reverse current i drp - - - 48 a forward voltage (diode) v dsf i dr = 12 a, v gs = 0 v - - 1.4 v reverse recovery time trr i dr = 12 a, v gs = 0 v, di dr / dt = 100 a / s - 450 - ns reverse recovery charge qrr - 5.0 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l=14mh,i as =12a,v dd =95v,r g =25 ,starting t j =25 3.i sd 12 a,di/dt 200a/us, v dd steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 1 1 1 1 2 2 2 2 n6 n6 n6 n6 5 5 5 5 3 / 7 fig.1 on-state cha ra cteristics fig.2 transfer current c haracteristics fig.3 on-resistance variation vs drain current fig.4 body diode forward voltage variation with source current and temperature fig.8 on-resistance variation vs junction temperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 1 1 1 1 2 2 2 2 n6 n6 n6 n6 5 5 5 5 4 / 7 fig.7 maximum safe operation area fig.8 maximum drain current vs case temperature fig.9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 1 1 1 1 2 2 2 2 n6 n6 n6 n6 5 5 5 5 5 / 7 fig.10 gate test circuit & waveform fig.11 r esistive switching test circuit & waveform fig.12 uncamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 1 1 1 1 2 2 2 2 n6 n6 n6 n6 5 5 5 5 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 1 1 1 1 2 2 2 2 n6 n6 n6 n6 5 5 5 5 7 / 7 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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